Title :
EMI prediction method for SiC inverter by the modeling of structure and the accurate model of power device
Author :
Maekawa, Syota ; Tsuda, Junichi ; Kuzumaki, Atsuhiko ; Matsumoto, Shinichi ; Mochikawa, Hiroshi ; Kubota, Hajime
Author_Institution :
Toshiba Corp. Fuchu Oper., Fuchu, Japan
Abstract :
In recent years, the switching speed is increased accelerately. And, the increase of EMI by high dv/dt is a problem. In this paper, the Tri-phase 400 Vrms inverter for system interconnections which used SiC-JFET is analyzed. And, it is shown that noise terminal voltage is analyzable with an error of ±15 dB by highly precise modeling.
Keywords :
III-V semiconductors; electromagnetic interference; invertors; junction gate field effect transistors; power semiconductor devices; power system interconnection; silicon compounds; wide band gap semiconductors; SiC; SiC-JFET; accurate power device model; inverter; noise terminal voltage; power device structure modeling; speed switching EMI prediction method; system interconnections; voltage 400 V; Analytical models; Capacitors; Circuit analysis; Earth; Integrated circuit modeling; Load modeling; Semiconductor device modeling; EMI; SiC; analysis; power electronics;
Conference_Titel :
Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
Conference_Location :
Hiroshima
DOI :
10.1109/IPEC.2014.6869851
