• DocumentCode
    1774139
  • Title

    EMI prediction method for SiC inverter by the modeling of structure and the accurate model of power device

  • Author

    Maekawa, Syota ; Tsuda, Junichi ; Kuzumaki, Atsuhiko ; Matsumoto, Shinichi ; Mochikawa, Hiroshi ; Kubota, Hajime

  • Author_Institution
    Toshiba Corp. Fuchu Oper., Fuchu, Japan
  • fYear
    2014
  • fDate
    18-21 May 2014
  • Firstpage
    1929
  • Lastpage
    1934
  • Abstract
    In recent years, the switching speed is increased accelerately. And, the increase of EMI by high dv/dt is a problem. In this paper, the Tri-phase 400 Vrms inverter for system interconnections which used SiC-JFET is analyzed. And, it is shown that noise terminal voltage is analyzable with an error of ±15 dB by highly precise modeling.
  • Keywords
    III-V semiconductors; electromagnetic interference; invertors; junction gate field effect transistors; power semiconductor devices; power system interconnection; silicon compounds; wide band gap semiconductors; SiC; SiC-JFET; accurate power device model; inverter; noise terminal voltage; power device structure modeling; speed switching EMI prediction method; system interconnections; voltage 400 V; Analytical models; Capacitors; Circuit analysis; Earth; Integrated circuit modeling; Load modeling; Semiconductor device modeling; EMI; SiC; analysis; power electronics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
  • Conference_Location
    Hiroshima
  • Type

    conf

  • DOI
    10.1109/IPEC.2014.6869851
  • Filename
    6869851
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1774139