System integration of GaN technology

Gallium nitride (GaN) power semiconductor technology offers a potential for significant performance increase in power electronic converters. This potential cannot be fully exploited if GaN devices are used as drop-in replacement for silicon devices in existing systems. This paper investigates the switching limits influenced by the device output parasitic capacitance and parasitic inductance of the commutation cell capacitor. The trade-offs between thermal management and high frequency switching of GaN devices in power converters are explored. Finally, an outlook on technology needs for 3D integration of GaN converters for achieving high switching frequencies and power densities is given.