Recent technical trends and future prospects of IGBTs and power MOSFETs

Author

Ogura, Tsuneo

Author_Institution

Discrete Semicond. Div., Toshiba Corp., Kawasaki, Japan

fYear

2014

fDate

18-21 May 2014

Firstpage

2068

Lastpage

2073

Abstract

In this paper, recent technical trends and future prospects of IGBTs and power MOSFETs is presented. Device technologies mainly for reducing power loss are discussed. This is because the reduction in power loss of these power devices is important for home and consumer appliances. Firstly, historical main road maps of these device technologies are introduced. Next, proposed future road maps and distinguishing results are also introduced. And, a comparison with IGBTs, power MOSFETs and Si-CMOSFETs is discussed. Finally, I will conclude that Si-power devices and SiC-power devices will coexist in home and consumer appliances by taking advantage of each characteristic in the near future.

Keywords

domestic appliances; elemental semiconductors; insulated gate bipolar transistors; power MOSFET; silicon; silicon compounds; wide band gap semiconductors; IGBT; Si; SiC; consumer appliances; home appliances; power MOSFET; power devices; power loss reduction; Heating; Insulated gate bipolar transistors; MOSFET; Refrigerators; Switches; Switching circuits; IGBT; power MOSFET; power semiconductor device;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International

Conference_Location

Hiroshima

Type

conf

DOI

10.1109/IPEC.2014.6869872

Filename

6869872