• DocumentCode
    1774228
  • Title

    DCM analysis of a single SiC switch based ZVZCS tapped boost converter

  • Author

    Choi, Bo H. ; Lee, Eun S. ; Kim, Ji H. ; Rim, Chun T.

  • Author_Institution
    Dept. of Nucl. & Quantum Eng., KAIST, Daejeon, South Korea
  • fYear
    2014
  • fDate
    18-21 May 2014
  • Firstpage
    2232
  • Lastpage
    2239
  • Abstract
    The analysis of discontinuous conduction mode (DCM) for a novel single active switch based zero voltage and zero current switching (ZVZCS) tapped boost converter is proposed in this paper. The ZVZCS converter includes a lossless snubber composed of three diodes and two capacitors, and exhibits novel ZVZCS operation for wide operating ranges of duty cycle, load current, and input voltage. The voltage stress of the active switch is always less than load voltage, and soft switching turn-on and off is achieved without cumbersome current or voltage sensing, which could not have been obtained from quasi-resonant converters that also have an active switch. A detailed analysis for the DCM and the design procedures of the proposed converter are presented. Experiments for a 450 W prototype show 99.0% of maximum efficiency with a SiC JFET at the switching frequency of 50 kHz, and the ZVZCS operation is guaranteed even for the DCM under the experiment conditions.
  • Keywords
    capacitors; field effect transistor switches; power semiconductor switches; silicon compounds; snubbers; switching convertors; zero current switching; zero voltage switching; DCM analysis; JFET; SiC; active switch; capacitors; diodes; discontinuous conduction mode; duty cycle; frequency 50 kHz; load current; lossless snubber; power 450 W; soft switching turn-off; soft switching turn-on; switch based ZVZCS tapped boost converter; voltage stress; zero current switching; zero voltage switching; Magnetic analysis; Magnetomechanical effects; Silicon carbide; Stress; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
  • Conference_Location
    Hiroshima
  • Type

    conf

  • DOI
    10.1109/IPEC.2014.6869900
  • Filename
    6869900