Study on low-loss gate drive circuit for high efficiency server power supply using normally-off SiC-JFET

Author

Katoh, Kentaroh ; Ishikawa, Kenji ; Hatanaka, Ayumu ; Ogawa, Koichi ; Akiyama, Soramichi ; Ogawa, Tomomi ; Yokoyama, Naoki ; Maru, Noriaki ; Takahashi, Osamu ; Nishisu, Koji

Author_Institution

Hitachi Res. Lab., Dept. of Power Electron. Syst. Res., Hitachi Ltd., Hitachi, Japan

fYear

2014

fDate

18-21 May 2014

Firstpage

2285

Lastpage

2289

Abstract

We investigated how to reduce the energy loss of server power supplies equipped with vertical-trench normally-off Silicon Carbide junction-gate field-effect transistors (SiC-JFETs). High-speed driving circuits consisting of a speed-up capacitor with separated source terminal and timing adjust circuits to ensure a dead time margin are proposed. Applying the developed normally-off SiC-JFETs and the proposed gate driver to PFC circuits and DC/AC circuits resulted in, an increase of server power supply efficiency to 95.10%.

Keywords

JFET circuits; driver circuits; invertors; junction gate field effect transistors; losses; power semiconductor devices; power supply circuits; rectifying circuits; silicon compounds; wide band gap semiconductors; DC-AC circuits; PFC circuit; SiC; energy loss reduction; gate driver; high efficiency server power supply; high speed driving circuit; low loss gate drive circuit; normally-off JFET; vertical trench junction gate field effect transistor; Driver circuits; Hardware; JFETs; Logic gates; Rectifiers; Servers; Silicon; Silicon Carbide (SiC); high-speed driving circuits; junction-gate field-effect transistors (JFETs); normally-off; server power supply;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International

Conference_Location

Hiroshima

Type

conf

DOI

10.1109/IPEC.2014.6869908

Filename

6869908