• DocumentCode
    1774307
  • Title

    1.2kW dual-active bridge converter using SiC power MOSFETs and planar magnetics

  • Author

    De, Debashis ; Castellazzi, Alberto ; Lamantia, A.

  • Author_Institution
    Power Electron. & Machines Control Group, Univ. of Nottingham, Nottingham, UK
  • fYear
    2014
  • fDate
    18-21 May 2014
  • Firstpage
    2503
  • Lastpage
    2510
  • Abstract
    This paper proposes the development of a compact high frequency bi-directional dc-dc converter, particularly designed for the case of future avionic applications, where one DC power bus at 270V needs to be interconnected with a 28V one. The selection of the topology (dual active bridge) in comparison with other isolated high step down topologies is presented with state-of-the-art power device technology. The topology is implemented with new semiconductor device technology to maximize the switching frequency and deliver a solution with contained volume and weight. Planar magnetic are employed to further optimize the converter shape. An experimental evaluation and detailed loss separation based on simulation study are presented.
  • Keywords
    DC-DC power convertors; power MOSFET; power convertors; silicon compounds; dual-active bridge converter; high frequency bidirectional dc-dc converter; planar magnetics; power 1.2 kW; power MOSFET; semiconductor device technology; voltage 270 V; voltage 28 V; Aerospace electronics; Benchmark testing; Heating; Switches; Dual active bridge converter; SiC power MOSFETs; planar magnetics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
  • Conference_Location
    Hiroshima
  • Type

    conf

  • DOI
    10.1109/IPEC.2014.6869941
  • Filename
    6869941