DocumentCode
1774307
Title
1.2kW dual-active bridge converter using SiC power MOSFETs and planar magnetics
Author
De, Debashis ; Castellazzi, Alberto ; Lamantia, A.
Author_Institution
Power Electron. & Machines Control Group, Univ. of Nottingham, Nottingham, UK
fYear
2014
fDate
18-21 May 2014
Firstpage
2503
Lastpage
2510
Abstract
This paper proposes the development of a compact high frequency bi-directional dc-dc converter, particularly designed for the case of future avionic applications, where one DC power bus at 270V needs to be interconnected with a 28V one. The selection of the topology (dual active bridge) in comparison with other isolated high step down topologies is presented with state-of-the-art power device technology. The topology is implemented with new semiconductor device technology to maximize the switching frequency and deliver a solution with contained volume and weight. Planar magnetic are employed to further optimize the converter shape. An experimental evaluation and detailed loss separation based on simulation study are presented.
Keywords
DC-DC power convertors; power MOSFET; power convertors; silicon compounds; dual-active bridge converter; high frequency bidirectional dc-dc converter; planar magnetics; power 1.2 kW; power MOSFET; semiconductor device technology; voltage 270 V; voltage 28 V; Aerospace electronics; Benchmark testing; Heating; Switches; Dual active bridge converter; SiC power MOSFETs; planar magnetics;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
Conference_Location
Hiroshima
Type
conf
DOI
10.1109/IPEC.2014.6869941
Filename
6869941
Link To Document