Design of high-speed igbt-based switching modules for pulsed power applications

This paper presents the design of IGBT-based switching modules for pulsed power applications. Starting from theoretical and practical aspects for the selection of the IGBTs the required parameters for the design of a single cell are derived. Extended results of the characterization process for different IGBTs are presented. They show that by using a special gate driving method for IGBT devices it is possible to realize the required maximum values of peak current and current slope. From the design of the single cell the conditions for a multiple cell series connection for the target application follow. This includes the development of a high-speed gate drive based on a pulse transformer. The designed cascade is used in a nitrogen gas laser and switches a voltage of 12 kV and carries a peak current of 500A at a maximum current slope of about 28Ans^-1.