DocumentCode
1774482
Title
1700V Si-IGBT and SiC-SBD hybrid module for AC690V inverter system
Author
Haining Wang ; Ikawa, O. ; Miyashita, S. ; Nishimura, T. ; Igarashi, Seiki
Author_Institution
Applic. Technol. Dept., Fuji Electr. Co., Ltd., Matsumoto, Japan
fYear
2014
fDate
18-21 May 2014
Firstpage
3702
Lastpage
3706
Abstract
The 1700V/400A hybrid module is consisted of Si-IGBTs and SiC-SBDs mounted in a general 2in1 package. Because the reverse recovery current of SiC-SBD is very small to be an unipolar device, reverse recovery and turn-on losses at 400A on the hybrid module are 83% and 38% lower than that of the conventional all Si module, respectively. Therefore there is a further advantage of hybrid module at high frequency operation. Radiation noise on hybrid module becomes higher with increasing collector current, but the peak value of the noise from hybrid module is almost same as the all Si module if the collector current is less than 300A. In AC690V PWM inverter, the total power dissipation of hybrid module is 8% lower at 1 kHz and 29% lower at 10 kHz compare to the all Si module. Therefore the 1700V hybrid module is useful as a power module for an AC690V high efficiency inverter system such as wind power generation system and high voltage solar power generation system. This paper reports about the static and dynamic characteristics and the radiation noise measurement results on the 400A/1700V hybrid module.
Keywords
PWM invertors; Schottky diodes; insulated gate bipolar transistors; modules; silicon; silicon compounds; AC690V inverter system; IGBT; PWM inverter; SBD; Schottky barrier diode; Si; SiC; collector current; current 400 A; frequency 1 kHz; frequency 10 kHz; hybrid module; insulated gate bipolar transistor; power dissipation; power module; pulse width modulation inverter; radiation noise; reverse recovery current; turn-on losses; voltage 1700 V; Electric breakdown; Hybrid power systems; Insulated gate bipolar transistors; Inverters; Logic gates; Silicon; Switches; 1700V hybrid module; FFT; SiC-SBD; radiation noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
Conference_Location
Hiroshima
Type
conf
DOI
10.1109/IPEC.2014.6870030
Filename
6870030
Link To Document