Loss analysis and soft-switching characteristics of flyback-forward high gain DC/DC converter with GaN FET

Compared with Si MOSFET, the GaN FET devices have advantages in the electrical characteristics, thermal properties and mechanical properties. This paper compares electrical properties of the GaN FET and Si MOSFET. Evaluation of the GaN FET based on flyback-forward high gain DC/DC converter at soft-switching condition are presented in detail. In addition, the power loss analysis of GaN FET based flyback-forward high gain DC/DC converter is discussed in detail. Finally a 200W GaN FET based flyback-forward high gain DC/DC converter is established, experiment results verified that the GaN FET is superior to the silicon MOSFET in switching characteristic and efficiency.