DocumentCode :
1774624
Title :
Advantage of super junction MOSFET for power supply application
Author :
Tabira, K. ; Watanabe, Shigetaka ; Shimatou, T. ; Watashima, T. ; Takenoiri, S.
Author_Institution :
Fuji Electr. Co., Ltd., Matsumoto, Japan
fYear :
2014
fDate :
18-21 May 2014
Firstpage :
2939
Lastpage :
2943
Abstract :
Characteristics of fast recovery diode (FRED) type super junction MOSFET (SJ-MOS) are reported. The reverse recovery ruggedness (-di/dt ruggedness) of the SJ-MOS FRED is dramatically improved compared to that of non-FRED type, which is almost 16 times better.
Keywords :
power MOSFET; power semiconductor diodes; power supply circuits; SJ-MOS FRED reverse recovery ruggedness; fast recovery diode; power supply application; super junction MOSFET; Digital TV; Logic gates; Fast recovery diode type; Super junction MOSFET; power supply efficiency; reverse recovery ruggedness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
Conference_Location :
Hiroshima
Type :
conf
DOI :
10.1109/IPEC.2014.6870100
Filename :
6870100
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1774624
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