Title :
Analysis on scattering parameters for coupled microstrip lines with bend discontinuities
Author :
Jiao He ; Liangqi Gui ; Tao Jiang ; Cong Zhou ; Lang Lv
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Multi-spectral Inf. Process., China
Abstract :
In this paper, we propose a method to analyze the scattering parameters for coupled microstrip lines with bend discontinuities. The key idea of the proposed method is to analyze the coupled bends and parallel coupled lines individually. Specifically, the equivalent π circuit model is built to approximate coupled bends and the corresponding scattering matrix is obtained by converting Z-matrix; the scattering matrix of parallel coupled lines is acquired by the odd-even mode theory. Then, we can compute the scattering parameters of the coupled microstrip lines with bend discontinuities based on the cascade property of transmission matrix, which is transformed from the scattering matrix. The agreement between theoretical results and simulation results shows the effectiveness of the proposed method. Moreover, the method avoids complex mixed integral operations and provides guidance for designing bent coupled microstrip lines.
Keywords :
S-matrix theory; S-parameters; electromagnetic coupling; microstrip discontinuities; Z-matrix conversion; equivalent π circuit model; odd-even mode theory; parallel coupled microstrip line bend discontinuity; scattering matrix; scattering parameter analysis; transmission matrix; Integrated circuit modeling; Matrix converters; Microstrip; Scattering; Scattering parameters; Silicon; Transmission line matrix methods; Scattering parameters; bend discontinuities; coupled microstrip lines;
Conference_Titel :
Wireless Communications and Signal Processing (WCSP), 2014 Sixth International Conference on
Conference_Location :
Hefei
DOI :
10.1109/WCSP.2014.6992021