Title :
Design of the 110GHz high order multiplier base on IMPATT diode
Author :
Zhu, Z.B. ; Cui, W.Z. ; Tan, Q.G. ; Jiang, Wei ; Liang, D. ; Li, S.T.
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on space Microwave, China Acad. of Space Technol. (Xi´an), Xi´an, China
Abstract :
As microwave technology developed, the frequency of imaging radar system working on is become higher and higher, which bring the width frequency band make a higher resolution for system. But the lack of high frequency source with a simple structure above 100GHz limits the development of high resolution imaging radar. In this paper, a 110GHz high order multiplier source is present. The source has an 18 orders and multiply efficiency is >1%, which can change a C band signal to 110GHz band with only one step. The source has a planar structure can easily integrate to radar system as a middle excitation source for TWTA (Travelling-Wave Tube Amplifier).
Keywords :
IMPATT diodes; frequency multipliers; millimetre wave frequency convertors; radar imaging; C band signal; IMPATT diode; TWTA; frequency 110 GHz; high order multiplier design; imaging radar system; microwave technology; middle excitation source; planar structure; travelling-wave tube amplifier; Cavity resonators; Microwave antennas; Microwave imaging; Radar imaging; Resonant frequency; Signal resolution; IMPATT; Multiplier; THz; high order component;
Conference_Titel :
Antennas and Propagation (APCAP), 2014 3rd Asia-Pacific Conference on
Conference_Location :
Harbin
Print_ISBN :
978-1-4799-4355-5
DOI :
10.1109/APCAP.2014.6992741
