Design of the 110GHz high order multiplier base on IMPATT diode

Author

Zhu, Z.B. ; Cui, W.Z. ; Tan, Q.G. ; Jiang, Wei ; Liang, D. ; Li, S.T.

Author_Institution

Nat. Key Lab. of Sci. & Technol. on space Microwave, China Acad. of Space Technol. (Xi´an), Xi´an, China

fYear

2014

fDate

26-29 July 2014

Firstpage

1239

Lastpage

1241

Abstract

As microwave technology developed, the frequency of imaging radar system working on is become higher and higher, which bring the width frequency band make a higher resolution for system. But the lack of high frequency source with a simple structure above 100GHz limits the development of high resolution imaging radar. In this paper, a 110GHz high order multiplier source is present. The source has an 18 orders and multiply efficiency is >1%, which can change a C band signal to 110GHz band with only one step. The source has a planar structure can easily integrate to radar system as a middle excitation source for TWTA (Travelling-Wave Tube Amplifier).

Keywords

IMPATT diodes; frequency multipliers; millimetre wave frequency convertors; radar imaging; C band signal; IMPATT diode; TWTA; frequency 110 GHz; high order multiplier design; imaging radar system; microwave technology; middle excitation source; planar structure; travelling-wave tube amplifier; Cavity resonators; Microwave antennas; Microwave imaging; Radar imaging; Resonant frequency; Signal resolution; IMPATT; Multiplier; THz; high order component;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation (APCAP), 2014 3rd Asia-Pacific Conference on

Conference_Location

Harbin

Print_ISBN

978-1-4799-4355-5

Type

conf

DOI

10.1109/APCAP.2014.6992741

Filename

6992741