• DocumentCode
    1775947
  • Title

    A compact 3-dB 90º directional coupler in integrated passive devices manufacturing process for LTE applications

  • Author

    Wang, Chingyue ; Li, Yuhua ; Kim, N.Y.

  • Author_Institution
    RFIC Center, Kwangwoon Univ., Seoul, South Korea
  • fYear
    2014
  • fDate
    26-29 July 2014
  • Firstpage
    1291
  • Lastpage
    1292
  • Abstract
    A compact 3 dB 90° directional coupler is fabricated by integrated passive device (IPD) process on SI-GaAs substrate for long term evolution (LTE) application. The operating frequency is between 800 MHz to 915 MHz, which is the LTE application frequency band 5 and band 8. At the center frequency of 875 MHz, the proposed coupler achieved -0.8 dB of insertion loss and -3.5 dB of coupling. The reflection coefficient S11 and the isolation S31 are -23.13 dB and -25 dB, respectively. It has 0.6 degree of phase error over the frequency range. This work can be a good candidate for 3-dB divider/combiner and bandpass filter as well as for balanced power amplifier (PA) application.
  • Keywords
    Long Term Evolution; UHF power amplifiers; band-pass filters; directional couplers; elemental semiconductors; gallium arsenide; monolithic integrated circuits; power combiners; power dividers; silicon; 3-dB divider-combiner; IPD process; LTE application; Long Term Evolution application; PA application; balanced power amplifier application; bandpass filter; compact directional coupler; frequency 800 MHz to 915 MHz; insertion loss; integrated passive device manufacturing process; phase error; reflection coefficient; Couplings; Directional couplers; Long Term Evolution; Loss measurement; Metals; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Antennas and Propagation (APCAP), 2014 3rd Asia-Pacific Conference on
  • Conference_Location
    Harbin
  • Print_ISBN
    978-1-4799-4355-5
  • Type

    conf

  • DOI
    10.1109/APCAP.2014.6992756
  • Filename
    6992756