Low insertion loss GHz GaN SAW device fabricated on self-standing GaN substrate

Author

Jianjun Zhou ; Liang Li ; Haiyan Lu ; Cen Kong ; Yuechan Kong ; Tangsheng Chen ; Chen Chen ; Xiaoyu Wang ; Haodong Wu

Author_Institution

Sci. & Technol. on Monolithic Integrated Circuits & Modules Lab., Nanjing Electron. Devices Inst., Nanjing, China

fYear

2014

fDate

26-29 July 2014

Firstpage

1348

Lastpage

1350

Abstract

A GHz SAW device with two face-to-face interdigitated transducers (IDTs) was fabricated on self-standing semi-insulating GaN substrate. Using an advanced e-beam lithographical techniques, the IDTs with 0.5μm wide fingers and spacing have been fabricated on self-standing GaN substrate. On wafer measurement of the S parameters have demonstrated the operation at approximately 2 GHz with 10dB insertion loss.

Keywords

III-V semiconductors; S-parameters; electron beam lithography; gallium compounds; interdigital transducers; surface acoustic wave devices; wide band gap semiconductors; GaN; S parameters; SAW device; advanced e-beam lithographical techniques; face-to-face interdigitated transducers; insertion loss; loss 10 dB; on wafer measurement; self-standing semi-insulating substrate; Gallium nitride; HEMTs; Insertion loss; Loss measurement; MODFETs; Substrates; Surface acoustic wave devices; GHz; gan; low insertion loss; surface acoustic wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation (APCAP), 2014 3rd Asia-Pacific Conference on

Conference_Location

Harbin

Print_ISBN

978-1-4799-4355-5

Type

conf

DOI

10.1109/APCAP.2014.6992773

Filename

6992773