Design of a new active frequency selective surface(FSS)

Ordinary active frequency selective surface (AFSS) was thought to consist of slots etched on one side of a substrate, with the biasing circuit on the other side. In this paper, a new AFSS without biasing circuit is proposed, the inductive voltage produced by incident wave become bias control signal of the lumped active device. Simulation result shows that the FSS resonant at 3GHz (with tiny insert loss) when the field strength of incident wave is small, then the insert loss of the FSS increase along with the field strength of the incident wave when the field strength is larger than 70V/m, the rejection of 3GHz incident wave increase to 18dB when the incident field strength become 10kV/m.