Title :
A high power amplifier at Ka-band
Author :
Yang Jiansong ; Guo Dechun
Author_Institution :
Sch. of Inf. & Electron., Beijing Inst. of Technol., Beijing, China
Abstract :
In this paper, we describe the design of a high power amplifier at Ka band. To achieve the output power of more than 30dBm, at first we design a one-stage power amplifier, and then design a two-stage amplifier circuit through the directional coupler, and ultimately achieve 31dBm of output power. The design is based on GaN materials to build a physical model of the HEMT. The S-parameters are extracted by using the HFSS software to build the physical structure of the passive components. At last we get a multi-stage amplifier design through ADS simulation.
Keywords :
HEMT circuits; III-V semiconductors; S-parameters; directional couplers; gallium compounds; microwave power amplifiers; wide band gap semiconductors; ADS simulation; GaN; HEMT; HFSS software; Ka-band; S-parameters; directional coupler; high power amplifier; multistage amplifier design; one-stage power amplifier; passive components; physical model; physical structure; two-stage amplifier circuit; Gallium nitride; Impedance; Microwave amplifiers; Microwave circuits; Power amplifiers; Power generation; Coupler; GaN; Ka-band; high power amplifiers;
Conference_Titel :
Antennas and Propagation (APCAP), 2014 3rd Asia-Pacific Conference on
Conference_Location :
Harbin
Print_ISBN :
978-1-4799-4355-5
DOI :
10.1109/APCAP.2014.6992782
