Title :
Design of a Ku-band AlGaN/GaN low noise amplifier
Author :
Fengqiang Guo ; Zhihong Yao
Author_Institution :
13th Res. Inst., China Electron. Technol. Group Corp., Shijiazhuang, China
Abstract :
AlGaN/GaN technology is attractive for its application to power amplifier. With the deepening of the research, noise performance of GaN device has also won acceptance. Compared with GaAs LNA, GaN LNA has a unique superiority on power handling. In this paper, a GaN Ku-band low noise amplifier is designed. A noise figure of 2.4dB at 16GHz and a gain of 18dB in the band of 14-18GHz are obtained at a drain voltage of 10V. The fabricated MMIC occupies only 2mm × 1.1mm.
Keywords :
III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; low noise amplifiers; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN technology; GaN Ku-band low noise amplifier; GaN LNA; MMIC; frequency 14 GHz to 18 GHz; gain 18 dB; power amplifier; voltage 10 V; Aluminum gallium nitride; Gallium arsenide; Gallium nitride; HEMTs; Low-noise amplifiers; MMICs; Noise; AlGaN/GaN HEMT; LNA; noise figure;
Conference_Titel :
Antennas and Propagation (APCAP), 2014 3rd Asia-Pacific Conference on
Conference_Location :
Harbin
Print_ISBN :
978-1-4799-4355-5
DOI :
10.1109/APCAP.2014.6992789
