A very low temperature coefficient (< 1ppm/°C) BiCMOS high order voltage reference design

Author

Hossain, M. Mofazzal

Author_Institution

Dept. of Electr. & Comput. Eng., St. Cloud State Univ., St. Cloud, MN, USA

fYear

2014

fDate

5-7 June 2014

Firstpage

573

Lastpage

576

Abstract

A very low temperature coefficient (<; 1 ppm/°C) BiCMOS curvature corrected bandgap voltage reference circuit design is presented in this paper. This voltage reference circuit shows promising thermal performances. The simulated design has a temperature coefficient of only 0.661 ppm/°C in the temperature range between -40°C and 125°C with 5 V power supply and <;1 ma current without a buffer. The proposed bandgap voltage reference circuit is designed using 180 nm process models for the CMOS devices and generic models for the BJT devices.

Keywords

BiCMOS integrated circuits; reference circuits; BJT devices; BiCMOS curvature corrected bandgap voltage reference circuit design; CMOS devices; power supply; size 180 nm; temperature -40 degC to 125 degC; thermal performances; very low temperature coefficient BiCMOS high order voltage reference design; voltage 5 V; BiCMOS integrated circuits; Photonic band gap; Resistors; Temperature dependence; Temperature distribution; Transistors; Analog integrated circuits; BJT; BiCMOS integrated circuits; mixed analog digital integrated circuits; nonlinear compensation; sensitivity; temperature compensation; temperature drift; temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electro/Information Technology (EIT), 2014 IEEE International Conference on

Conference_Location

Milwaukee, WI

Type

conf

DOI

10.1109/EIT.2014.6871827

Filename

6871827