DocumentCode :
1776324
Title :
Power and delay comparison of 1 Bit full adder designs at 180nm and 90nm technology
Author :
Singh, Neeraj Kumar ; Sharma, Praveen Kumar
Author_Institution :
Dept. of Electron. & Commun. Eng., North Eastern Regional Inst. of Sci. & Technol., Nirjuli, India
fYear :
2014
fDate :
10-11 July 2014
Firstpage :
666
Lastpage :
670
Abstract :
This paper puts forward a comparison between two 1 bit full adder designs: one using 4T XOR and the other using 4:1 MUX based 3 Input XOR. Both are designs are made up of 10 transistors. The simulation is done using Cadence Simulator at 180nm and 90nm Technology. Comparison is made among the two proposed designs with respect to power and delay. The results show the efficiency of the design.
Keywords :
adders; logic design; logic gates; transistors; 180nm technology; 4:1 MUX based 3 Input XOR; 4T XOR; 90nm technology; cadence simulator; full adder design; power and delay comparison; transistors; Adders; CMOS integrated circuits; Delays; Instruments; Logic gates; Transient response; Transistors; carry; full adder; mux; sum; xor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Control, Instrumentation, Communication and Computational Technologies (ICCICCT), 2014 International Conference on
Conference_Location :
Kanyakumari
Print_ISBN :
978-1-4799-4191-9
Type :
conf
DOI :
10.1109/ICCICCT.2014.6993044
Filename :
6993044
Link To Document :
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