Enhanced DC & RF performance of InGaAs based HEMT with fully quaternary InAlGaAs as buffer and barrier layer

Author

Shukla, Nitin ; Mohapatra, Meryleen ; Panda, Anup Kumar

Author_Institution

ECE Dept., Siksha `O´ Anusandhan Univ., Bhubaneswar, India

fYear

2014

fDate

10-11 July 2014

Firstpage

841

Lastpage

846

Abstract

This paper deals with design, modeling and characterization of a 50nm InAlGaAs/InGaAs based HEMT which is compared with a 50nm InAlAs/InGaAs based HEMT. A performance evaluation is done considering the above two HEMTs and the DC and RF characteristics are compared for the same device dimension. For a InAlGaAs/InGaAs based HEMT, a maximum drain current of 331mA/mm at V_gs=-0.2V, a cutoff frequency of 820GHz and a maximum oscillation frequency (f_max) of nearly 1.4THz is obtained which is more as compared to the device parameters obtained for InAlAs/InGaAs based HEMT. This HEMT has a maximum drain current of 297 mA/mm at V_gs=-0.2V, a cutoff frequency of 610GHz and a maximum oscillation frequency (f_max) of nearly 1.3THz.

Keywords

III-V semiconductors; aluminium compounds; buffer layers; gallium arsenide; high electron mobility transistors; indium compounds; radiofrequency integrated circuits; DC characteristics; HEMT; InAlGaAs-InGaAs; RF characteristics; barrier buffer; buffer buffer; cutoff frequency; device parameters; maximum drain current; maximum oscillation frequency; performance evaluation; size 50 nm; Cutoff frequency; HEMTs; Indium gallium arsenide; Indium phosphide; Logic gates; Performance evaluation; 2DEG; DC & RF characteristics; InAlGaAs/InGaAs HEMT; InGaAs/InAlAs HEMT;

fLanguage

English

Publisher

ieee

Conference_Titel

Control, Instrumentation, Communication and Computational Technologies (ICCICCT), 2014 International Conference on

Conference_Location

Kanyakumari

Print_ISBN

978-1-4799-4191-9

Type

conf

DOI

10.1109/ICCICCT.2014.6993075

Filename

6993075