Dual Gate field plated GaN HEMT With improved breakdown characteristic

This work compares the DC and RF performance for Single Gate(SG) field plated AlGaN/GaN High Electron Mobility Transistor (HEMT) with a Dual Gate(DG) field plated High Electron Mobility Transistor. The maximum drain current obtained for AlGaN/GaN DG field plated HEMT is 1057mA/mm at V_gs=0V and V_ds=10V, which is of 396mA/mm for AlGaN/GaN SG field plated HEMT. The maximum transconductance for Dual-Gate Field plated AlGaN/GaN HEMT is 49mS/mm for Vds=2V and 69mS/mm for Single-Gate field plated HEMT. The cut-off frequency obtained for AlGaN/GaN Dual-Gate field plated HEMT is 3.4GHz as compared to 6GHz for AlGaN/GaN Single gate field plated HEMT at V_ds=10V. For a single field plated HEMT the breakdown voltage obtained is 280V, but in case of Dual-Gate field plated HEMT, breakdown has not occurred till 600V, which is the main advantage obtained in case of DG field plated HEMT.