Scalable normally-off MIS-HEMT using fluorine implantation below the channel

Author

Hamady, Saleem ; Morancho, Frederic ; Beydoun, Bilal ; Austin, Patrick ; Gavelle, Mathieu

Author_Institution

LAAS, Toulouse, France

fYear

2014

fDate

18-20 June 2014

Firstpage

124

Lastpage

127

Abstract

A new normally-off Metal-Insulator-Semiconductor High-Electron-Mobility-Transistor (MIS-HEMT) is proposed. The design is based on the implantation of fluorine ions in the GaN layer below the gate electrode under the AlGaN/GaN interface. Sensitivity analyses are carried out, showing the effects of the fluorine concentration and the thickness of the insulator on the threshold voltage. The limitations and scalability of this technique are pointed out.

Keywords

III-V semiconductors; MIS devices; aluminium compounds; fluorine; gallium compounds; high electron mobility transistors; ion implantation; sensitivity analysis; wide band gap semiconductors; AlGaN-GaN; fluorine concentration; fluorine ion implantation; gallium nitride layer; gate electrode; insulator thickness; normally-off MIS-HEMT scalability; normally-off metal-insulator-semiconductor high-electron-mobility-transistor; sensitivity analysis; threshold voltage; Aluminum gallium nitride; Gallium nitride; HEMTs; Insulators; Logic gates; MODFETs; Threshold voltage; Fluorine implantation below the channel; Metal Insulator Semiconductor High Electron Mobility Transistor (MIS-HEMT); TCAD simulation; normally-off; wide bandgap devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM), 2014 International Symposium on

Conference_Location

Ischia

Type

conf

DOI

10.1109/SPEEDAM.2014.6872054

Filename

6872054