Title :
A fully explicit static model for DG JLFET valid in all modes of operation
Author :
Yesayan, Ashkhen ; Pregaldiny, Fabien
Author_Institution :
Inst. of Radiophys. & Electron., Ashtarak, Armenia
Abstract :
We present here an explicit compact model for the double-gate junctionless field-effect transistor (DG JLFET). The explicit relationships for the mobile channel charge density are introduced and the drain current is explicitly calculated as a function of the applied terminal voltages and structural parameters. Model validations are carried out by extensive comparison with 2D numerical simulations.
Keywords :
field effect transistors; semiconductor device models; 2D numerical simulations; DG JLFET; applied terminal voltages; double-gate junctionless field-effect transistor; drain current; explicit compact model; fully explicit static model; mobile channel charge density; structural parameters; Computational modeling; Logic gates; Mathematical model; Numerical models; Semiconductor process modeling; Silicon; Transistors; JLFET; MOS devices; compact modeling; silicon devices;
Conference_Titel :
Mixed Design of Integrated Circuits & Systems (MIXDES), 2014 Proceedings of the 21st International Conference
Conference_Location :
Lublin
Print_ISBN :
978-83-63578-03-9
DOI :
10.1109/MIXDES.2014.6872150
