Title :
Design of the ultrafast LVDS I/O interface in 40 nm CMOS process
Author :
Satlawa, Tadeusz ; Drozd, Aleksandra ; Kmon, Piotr
Author_Institution :
Dept. of Meas. & Electron., AGH Univ. of Sci. & Technol., Cracow, Poland
Abstract :
This paper presents the design and simulation results of the ultrafast LVDS I/O interface designed in 40 nm CMOS process. The LVDS transmitters and receivers were designed to support a data transfer of a multichannel Integrated Circuit dedicated for readout of hybrid pixel semiconductor detectors used for X-ray imaging applications. The transmitter is based on the current switching bridge architecture while the receiver is built of the inverting comparator with hysteresis. The LVDS I/O interface is supplied from 2.5 V and 0.9 V supply voltage. The transmitter and receiver occupy respectively 0.1 mm2 and 0.009 mm2 of chip area. The static/dynamic power consumption of the transmitter and receiver are respectively equal to 17.9/26.4 mW and 7.1/12.1 mW.
Keywords :
CMOS integrated circuits; X-ray imaging; integrated circuit design; readout electronics; semiconductor counters; CMOS process; LVDS receivers; LVDS transmitters; X-ray imaging applications; current switching bridge architecture; data transfer; hybrid pixel semiconductor detectors; inverting comparator; low voltage differential signalling; multichannel integrated circuit; power 12.1 mW; power 17.9 mW; power 26.4 mW; power 7.1 mW; size 40 nm; static-dynamic power consumption; ultrafast LVDS I/O interface design; voltage 0.9 V; voltage 2.5 V; CMOS integrated circuits; Optical transmitters; Power demand; Receivers; Simulation; Transistors; LVDS receiver; LVDS transmitter; X-ray imaging application; multichannel Integrated Circuits;
Conference_Titel :
Mixed Design of Integrated Circuits & Systems (MIXDES), 2014 Proceedings of the 21st International Conference
Conference_Location :
Lublin
Print_ISBN :
978-83-63578-03-9
DOI :
10.1109/MIXDES.2014.6872185
