Title :
Development of pixel detector in Novel sub-micron technology SOI CMOS 200 nm
Author :
Bugiel, Szymon ; Dasgupta, Roma ; Glab, Sebastian ; Idzik, Marek ; Kapusta, Piotr
Author_Institution :
AGH Univ. of Sci. & Technol., Cracow, Poland
Abstract :
This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in 200 nm SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionising particle (MIP) tracking in particle physics experiments. For this reason the overriding goal of the project was to increase the signal to noise ratio of the readout circuit and sensor.
Keywords :
CMOS integrated circuits; radiation detection; silicon-on-insulator; SOI CMOS technology; Si; minimum ionising particle tracking; monolithic silicon-on-insulator pixel sensor; pixel detector; readout circuit; signal to noise ratio; size 200 nm; spectroscopy; CMOS integrated circuits; Capacitance; Detectors; Noise; Prototypes; Silicon; Silicon-on-insulator; Double SOI; SOI sensor; Silicon-On-Insulator (SOI); correlated double sampling (CDS); front-end electronic; pixel detector;
Conference_Titel :
Mixed Design of Integrated Circuits & Systems (MIXDES), 2014 Proceedings of the 21st International Conference
Conference_Location :
Lublin
Print_ISBN :
978-83-63578-03-9
DOI :
10.1109/MIXDES.2014.6872186
