Implementation of the Bluetooth receiver RF front-end in the CMOS-RF 130 nm technology

In this paper, the RF chain for the Bluetooth receiver, implemented in the UMC CMOS 130 nm process, is presented. Project was carried out at the electrical schematic level. Due to the most beneficial parameters, the low-IF architecture was selected. The circuit is formed by a single-end low noise amplifier (LNA), an active balun and a quadrature double-balanced passive mixer. The Bluetooth receiver operates in 2.4 GHz ISM band and complies with Bluetooth´s specification (version 4.0 EDR) [1]. Design goals, such as noise figure (NF) and third order intermodulation point (IIP3), were calculated on the basis of the Bluetooth´s specification. The circuit exhibits a low noise figure of 2.32 dB and dissipates only 3.34 mW, what makes it suitable for low-power applications.