Title :
Low voltage area efficient current-mode CMOS bandgap reference in deep submicron technology
Author :
Kleczek, Rafal ; Grybos, Pawel
Author_Institution :
Dept. of Meas. & Electron., AGH Univ. of Sci. & Technol., Cracow, Poland
Abstract :
We report on the design of a low voltage area efficient current-mode CMOS bandgap reference implemented in 130 nm technology. The conventional voltage-mode and current-mode bandgap reference architectures with their properties and performance limiting factors are described. Due to the low supply voltage Vdd requirement the current-mode architecture was chosen. The simulated power dissipation Pdiss = 150 μW at the nominal supply voltage VDD = 1.2 V. As a result of Monte-Carlo analysis the average output reference current IREF ≈ 1 μA and its standard deviation σ = 11 nA are obtained. The reference current changes ΔIREF = 8 nA over the temperature range from 0 oC up to 100 oC. The reference current changes ΔIref = 4 nA for the supply voltage Vdd within the range from 1 V up to 1.5 V. The silicon chip area occupation is 0.07 mm2.
Keywords :
CMOS integrated circuits; Monte Carlo methods; limiters; reference circuits; Monte-Carlo analysis; current 1 muA; current 11 nA; current 4 nA; current 8 nA; deep submicron technology; low voltage area efficient current-mode CMOS bandgap reference; performance limiting factors; power 150 muW; reference current; size 130 nm; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Photonic band gap; Resistors; Silicon; Transistors; bandgap voltage reference; current-mode CMOS reference; low voltage;
Conference_Titel :
Mixed Design of Integrated Circuits & Systems (MIXDES), 2014 Proceedings of the 21st International Conference
Conference_Location :
Lublin
Print_ISBN :
978-83-63578-03-9
DOI :
10.1109/MIXDES.2014.6872194
