Title :
Usefulness of VeSTIC devices for low-noise and radiation hard 3D integrated circuits
Author :
Staniewski, Michal ; Pfitzner, Andrzej
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Warsaw, Poland
Abstract :
VeSTIC technology [1, 2] is a very promising concept of digital, analog and mixed mode ICs design, providing very large scale of integration, extreme layout regularity, as well as the possibility of manufacturing cost reduction and of fully three-dimensional integration. These features seem to be very attractive also in the case of MEMS systems, in particular MAP sensors. With regard to prospective applications, a first insight to noise spectra and radiation hardness of the field-effect VeSTIC devices has been performed and confirms their usefulness.
Keywords :
field effect transistors; radiation hardening (electronics); three-dimensional integrated circuits; field-effect VeSTIC devices; low-noise 3D integrated circuits; noise spectra; radiation hard 3D integrated circuits; radiation hardness; Integrated circuits; Logic gates; Noise; Performance evaluation; Radiation effects; Substrates; Transistors; VeSFET; VeSTIC; Vertical-Slit Field-Effect Transistor; Vertical-Slit Transistor Integrated Circuit; noise; radiation hardness;
Conference_Titel :
Mixed Design of Integrated Circuits & Systems (MIXDES), 2014 Proceedings of the 21st International Conference
Conference_Location :
Lublin
Print_ISBN :
978-83-63578-03-9
DOI :
10.1109/MIXDES.2014.6872217