Title :
Lateral transport in two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET)
Author :
Li, Mingda Oscar ; Esseni, David ; Jena, D. ; Xing, Huili Grace
Author_Institution :
Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
The single particle model has been developed for the tunneling between two monolayer two-dimensional (2D) semiconductors [1]. Based on this model, a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) (see Fig.1a) is proposed to achieve very steep subthreshold swing [1]. However, the initial study ignored the lateral transport in the top and bottom 2D layers. In this work, we study the effect of the lateral transport on the on-current area density and the sub-threshold swing (SS) of the Thin-TFET.
Keywords :
field effect transistors; semiconductor device models; tunnel transistors; Thin-TFET; bottom-2D layer; lateral transport; monolayer 2D semiconductor; monolayer two-dimensional semiconductor; on-current area density; single-particle model; subthreshold swing; top-2D layer; two-dimensional heterojunction interlayer tunneling field effect transistor; Charge carrier processes; Electric potential; Equations; Logic gates; Materials; Mathematical model; Tunneling;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872278
