Title :
Metal-dichalcogenide hetero-TFETs: Are they a viable option for low power electronics?
Author :
Szabo, Aron ; Koester, Steven J. ; Luisier, Mathieu
Author_Institution :
Integrated Syst. Lab., ETH Zurich, Zurich, Switzerland
Abstract :
Through advanced device simulations, we have demonstrated the feasibility of broken gap heteroTFETs based on strained WTe2-MoS2. The combination of two tunneling path ensures a low average iSS and a relatively high ON-current. To improve this performance and move towards low power electronics, other material combinations such as MoTe2-SnSe2 or WSe2-SnSe2 should be investigated with stress as additional design parameter.
Keywords :
field effect transistors; low-power electronics; molybdenum compounds; tungsten compounds; tunnel transistors; ON-current; WTe2-MoS2; advanced device simulation; broken gap hetero-TFET; design parameter; low-power electronics; material combination; metal-dichalcogenide hetero-TFET; tunneling field-effect transistors; tunneling path; Discrete Fourier transforms; Heterojunctions; Logic gates; Low-power electronics; Materials; Transistors; Tunneling;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872279
