Steep slope VO2 switches for wide-band (DC-40 GHz) reconfigurable electronics

Author

Vitale, W.A. ; Paone, Antonio ; Fernandez-Bolanos, M. ; Bazigos, Antonios ; Grabinski, W. ; Schuler, Andreas ; Ionescu, A.M.

Author_Institution

NanoLAB, Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland

fYear

2014

fDate

22-25 June 2014

Firstpage

29

Lastpage

30

Abstract

This work proves the feasibility of electrically actuated, CMOS compatible, microwave VO₂ switches on SiO₂/Si substrates with low variability, 100% yield, better than 109 cycles lifetime, ultra-steep OFF-ON transition and better RF performance than previously reported VO₂ switches on Al₂O₃ substrates (flat -0.6 dB S_21-ON with -10 dB S_21-OFF at 40 GHz). The extensive characterization of the fabricated switches has led to an optimum design with maximized S_21-ON/S_21-OFF ratio and validation as a promising solution for wideband reconfigurable electronics.

Keywords

microwave switches; silicon; silicon compounds; vanadium compounds; RF performance; SiO₂-Si; VO₂; electrically-actuated CMOS-compatible microwave vanadium oxide switches; fabricated switch characterization; optimum design; steep slope vanadium oxide switches; ultrasteep OFF-ON transition; wideband reconfigurable electronics; Conductivity; Coplanar waveguides; Films; Performance evaluation; Radio frequency; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2014 72nd Annual

Conference_Location

Santa Barbara, CA

Print_ISBN

978-1-4799-5405-6

Type

conf

DOI

10.1109/DRC.2014.6872284

Filename

6872284