Diffraction limited 3.15 μm cascade diode lasers

Author

Rui Liang ; Shterengas, L. ; Hosoda, T. ; Stein, Aaron ; Ming Lu ; Kipshidze, G. ; Belenky, G.

Author_Institution

Dept. of ECE, Stony Brook Univ., Stony Brook, NY, USA

fYear

2014

fDate

22-25 June 2014

Firstpage

37

Lastpage

38

Abstract

In this work we report on design and development of the single spatial mode cascade diode lasers operating near 3.15 μm. The narrow ridge lasers generated more than 40 mW of continuous wave (CW) power at room temperature (RT) in diffraction limited beam. Each gains stage consists of three nominally 1.3%-compressively-strained Ga₄₅In₅₅As₃₀Sb₇₀ quantum wells (QWs), spaced by 50 nm of quinary AlGaInAsSb barriers, and sandwiched between two 200-/250-nm-wide barrier layers of the same composition. The tunnel junction/carrier injector heterostructure was based on 100-μm-thick AlGaAsSb graded layer, 10-nm-thick GaSb layer and moderately doped 25-nm-wide chirped AlSb/InAs superlattice.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; light diffraction; quantum cascade lasers; semiconductor heterojunctions; semiconductor superlattices; Ga₄₅In₅₅As₃₀Sb₇₀-AlGaInAsSb; compressively-strained quantum well; continuous wave power; diffraction limited beam; diffraction limited cascade diode lasers; moderately doped chirped superlattice; narrow ridge lasers; quinary barriers; single spatial mode cascade diode lasers; size 10 nm to 100 mum; temperature 293 K to 298 K; tunnel junction/carrier injector heterostructure; Diffraction; Diode lasers; Laser beams; Laser modes; Measurement by laser beam; Quantum cascade lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2014 72nd Annual

Conference_Location

Santa Barbara, CA

Print_ISBN

978-1-4799-5405-6

Type

conf

DOI

10.1109/DRC.2014.6872288

Filename

6872288