Title :
Diffraction limited 3.15 μm cascade diode lasers
Author :
Rui Liang ; Shterengas, L. ; Hosoda, T. ; Stein, Aaron ; Ming Lu ; Kipshidze, G. ; Belenky, G.
Author_Institution :
Dept. of ECE, Stony Brook Univ., Stony Brook, NY, USA
Abstract :
In this work we report on design and development of the single spatial mode cascade diode lasers operating near 3.15 μm. The narrow ridge lasers generated more than 40 mW of continuous wave (CW) power at room temperature (RT) in diffraction limited beam. Each gains stage consists of three nominally 1.3%-compressively-strained Ga45In55As30Sb70 quantum wells (QWs), spaced by 50 nm of quinary AlGaInAsSb barriers, and sandwiched between two 200-/250-nm-wide barrier layers of the same composition. The tunnel junction/carrier injector heterostructure was based on 100-μm-thick AlGaAsSb graded layer, 10-nm-thick GaSb layer and moderately doped 25-nm-wide chirped AlSb/InAs superlattice.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; light diffraction; quantum cascade lasers; semiconductor heterojunctions; semiconductor superlattices; Ga45In55As30Sb70-AlGaInAsSb; compressively-strained quantum well; continuous wave power; diffraction limited beam; diffraction limited cascade diode lasers; moderately doped chirped superlattice; narrow ridge lasers; quinary barriers; single spatial mode cascade diode lasers; size 10 nm to 100 mum; temperature 293 K to 298 K; tunnel junction/carrier injector heterostructure; Diffraction; Diode lasers; Laser beams; Laser modes; Measurement by laser beam; Quantum cascade lasers;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872288
