Gated piezoresistive GaN microcantilever as an acoustic transducer

Author

Talukdar, Anup ; Koley, Goutam

Author_Institution

Univ. of South Carolina, Columbia, SC, USA

fYear

2014

fDate

22-25 June 2014

Firstpage

45

Lastpage

46

Abstract

In this article, we present for the first time, transduction of ultrasonic acoustic pressure using a gated piezoresistive AlGaN/GaN Heterojunction Field Effect Transistor (HFET) integrated on GaN microcantilever. With a periodic pressure generated in air, the microcantilever was found to oscillate, and the HFET was able to transduce the pressure variation of 150.4 μPa in ambient conditions with a tunable linear sensitivity of 33.2 mV/Pa, response time <; 40 ms, and power consumption of 45 μW. The device demonstrates 3 orders higher pressure sensitivity than simple piezoresistor, and also higher than the sensitivity of commercially available Knowles microphone; thereby offering a promising alternative for cantilever enhanced photoacoustic spectroscopy (PAS).

Keywords

III-V semiconductors; aluminium compounds; cantilevers; gallium compounds; high electron mobility transistors; microsensors; piezoresistive devices; pressure measurement; pressure transducers; ultrasonic transducers; wide band gap semiconductors; AlGaN-GaN; HFET; Knowles microphone; PAS; gated piezoresistive microcantilever; heterojunction field effect transistor; periodic pressure generation; photoacoustic spectroscopy; piezoresistor; power 45 muW; pressure 150.4 muPa; ultrasonic acoustic pressure transducer; Acoustic transducers; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Microphones; Sensitivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2014 72nd Annual

Conference_Location

Santa Barbara, CA

Print_ISBN

978-1-4799-5405-6

Type

conf

DOI

10.1109/DRC.2014.6872292

Filename

6872292