1/f hopping noise in molybdenum disulphide

Molybdenum disulphide (MoS₂), a layered metal dichalcogenide material, has attracted significant attention recently for potential application in next-generation electronics, light detection and emission, and chemical sensing due to its unique electrical and optical properties. The intrinsic 2-dimensional nature of carriers in MoS₂ offers superior vertical scaling for device structure, leading to potentially low-cost, flexible, and transparent 2D electronic devices. However, the nature of charge transport still remains elusive, esp., a much lower mobility than theoretical limit set by phonon scattering. In this study, we focus on the study of low frequency noise (i.e., 1/f noise) of MoS₂ devices working in the hopping regime since 1/f noise limits the performance of devices. There has been scarce 1/f noise study on monolayer or few-layer MoS₂ based semiconductor devices. To the best of our knowledge, this is the first report focusing on 1/f hopping noise in MoS₂. In this work, the low frequency noise of high mobility single crystal MoS₂ is investigated by using transmission line measurements (TLM). At room temperature, the Hooge´s parameter is ranged between 1.44×10^-3 and 3.51×10^-2, and it shows an inverse relationship with the field mobility. At low temperatures, the 1/f noise performance reveals the hopping is nearest neighbor hopping.