Title :
All-CVD graphene field-effect transistors with h-BN gate dielectric and local back gate
Author :
Ebrish, Mona A. ; Koester, Steven J.
Author_Institution :
ECE Dept., Univ. of Minnesota-Twin Cities, Minneapolis, MN, USA
Abstract :
We have demonstrated operation of locally backgated graphene gFETs with CVD-grown h-BN and graphene, and the results provide important insights into the impact of h-BN on the transport and interfacial properties of these devices.
Keywords :
chemical vapour deposition; dielectric properties; field effect transistors; graphene; semiconductor growth; CVD-grown h-BN; all-CVD graphene field-effect transistors; h-BN gate dielectric; interfacial properties; locally back gated graphene gFETs; transport properties; Capacitance; Capacitance-voltage characteristics; Dielectrics; Graphene; Hafnium compounds; Logic gates; Transistors;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872297
