Demonstration of 2D/3D p-MoS2/n-SiC junction

Author

Lee, Edwin W. ; Lu Ma ; Nath, Digbijoy ; Choong Hee Lee ; Yiying Wu ; Rajan, Sreeraman

Author_Institution

Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA

fYear

2014

fDate

22-25 June 2014

Firstpage

79

Lastpage

80

Abstract

In this work, we demonstrate 2D/3D heterojunction using large-area crystalline p-MoS₂ epitaxially grown on n-doped 4H-SiC. The diode exhibited excellent rectification with an ideality factor of 1.5, as well as C-V characteristics typical of an anisotype p-n junction. Besides being promising for enabling novel device topologies, this realization of a p-type 2D/n-type 3D heterostructure holds potential for circumventing challenges associated with p-doping in wide bandgap (WBG) semiconductors which has otherwise held back the successful development of bipolar devices in WBG systems.

Keywords

epitaxial growth; molybdenum compounds; p-n heterojunctions; rectification; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; 2D-3D p-MoS₂-n-SiC junction; MoS₂-SiC; WBG semiconductors; anisotype p-n junction; bipolar devices; crystalline p-MoS₂ epitaxial growth; novel device topologies; p-doping; p-type 2D-n-type 3D heterostructures; wide bandgap semiconductors; Capacitance-voltage characteristics; Films; Junctions; Ohmic contacts; Semiconductor device measurement; Silicon carbide; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2014 72nd Annual

Conference_Location

Santa Barbara, CA

Print_ISBN

978-1-4799-5405-6

Type

conf

DOI

10.1109/DRC.2014.6872306

Filename

6872306