Title :
Demonstration of 2D/3D p-MoS2/n-SiC junction
Author :
Lee, Edwin W. ; Lu Ma ; Nath, Digbijoy ; Choong Hee Lee ; Yiying Wu ; Rajan, Sreeraman
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
Abstract :
In this work, we demonstrate 2D/3D heterojunction using large-area crystalline p-MoS2 epitaxially grown on n-doped 4H-SiC. The diode exhibited excellent rectification with an ideality factor of 1.5, as well as C-V characteristics typical of an anisotype p-n junction. Besides being promising for enabling novel device topologies, this realization of a p-type 2D/n-type 3D heterostructure holds potential for circumventing challenges associated with p-doping in wide bandgap (WBG) semiconductors which has otherwise held back the successful development of bipolar devices in WBG systems.
Keywords :
epitaxial growth; molybdenum compounds; p-n heterojunctions; rectification; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; 2D-3D p-MoS2-n-SiC junction; MoS2-SiC; WBG semiconductors; anisotype p-n junction; bipolar devices; crystalline p-MoS2 epitaxial growth; novel device topologies; p-doping; p-type 2D-n-type 3D heterostructures; wide bandgap semiconductors; Capacitance-voltage characteristics; Films; Junctions; Ohmic contacts; Semiconductor device measurement; Silicon carbide; Substrates;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872306
