Dual-gated field-effect transistors made from wafer-scale synthetic few-layer molybdenum disulfide

Molybdenum disulfide (MoS₂) has recently received significant attention because of its interesting thickness-dependent properties and its potential as a semiconducting substitute to graphene [1,2]. Most of the studies so far have focused on small (<; 100 microns) exfoliated MoS₂ flakes [1-3]. For manufacturable electronics, it is essential to have large-area material that is compatible with standard fabrication processes for high yield and reproducibility. Though significant progress has been achieved using chemical vapor deposition (CVD) [4,5], the formation of high-quality wafer-scale MoS₂ of controlled thickness is still a challenge.