Title :
Effect of HfO2 and Al2O3 on monolayer MoS2 electronic structure
Author :
Valsaraj, Amithraj ; Jiwon Chang ; Register, Leonard F. ; Banerjee, Sanjay K.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
Abstract :
Transition metal dichalcogenides (TMDs) are novel, and unlike graphene, gapped 2D materials with unique electrical and optical properties that are being explored for novel device applications. Their 2D nature also makes their properties sensitive to the surrounding environment. For example, a free standing monolayer of MoS2 - which has an experimentally reported direct band gap of Eg ≈ 1.8 eV1 - has a very low reported mobility (μ<;3 cm2/(V-s)),2 but exhibits significant enhancement of its mobility (μ~200 cm2/(V-s)) when superposed with a high-k dielectric like HfO2.3 Here, we study the effect of HfO2 and Al2O3 on monolayer MoS2 using density functional theory (DFT).
Keywords :
aluminium compounds; density functional theory; electron mobility; energy gap; hafnium compounds; high-k dielectric thin films; molybdenum compounds; monolayers; Al2O3-MoS2; DFT; HfO2-MoS2; aluminum oxide effect; density functional theory; direct band gap; electrical properties; electron mobility; gapped 2D materials; graphene; hafnium oxide effect; high-k dielectric like hafnium oxide; monolayer molybdenum sulfide electronic structure; optical properties; transition metal dichalcogenides; Aluminum oxide; Atomic layer deposition; Hafnium compounds; Passivation; Photonic band gap; Scattering; Slabs;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872310
