Electron transport in large-area epitaxial MoS2

We have investigated the electron transport phenomena in large area chemical vapor deposition (CVD) grown epitaxial MoS₂ on sapphire with in-plane and out of plane crystallinity over centimeter length scales. The high quality of these films leads to record high room temperature electron mobility of 192 cm²/Vs and high current density (> 150 mA/mm). The transport measurements are in good agreement with theoretical predictions of scattering and anisotropy in effective mass. This is the first report of synthetic few layer MoS₂ with longrange crystalline order, and mobility approaching theoretical limits.