InGaAs tri-gate MOSFETs with MOVPE regrown source/drain

InGaAs MOSFETs are attractive candidate for future high-speed and low-power-consumption devices. To enhance the performance of that, we propose a novel device structure which contains the superior current controllability due to the tri-gate structure and the high current drivability due to the n⁺-InGaAs source surrounding the non-planar channel. In this report, we demonstrate the source regrowth process for non-planar channel structure and current characteristics of the device fabricated by using regrowth.