Title :
Investigation of aging and restoration of polyethylene-oxide cesium-perchlorate solid polymer electrolyte used for ion doping of a WSe2 field-effect transistor
Author :
Fathipour, S. ; Huilong Xu ; Kinder, Erich ; Fullerton-Shirey, Susan ; Seabaugh, Alan
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
Transition metal dichalcogenides (TMDs) are of interest for tunnel field-effect transistors (TFETs) [1]. Their ultrathin body, absence of dangling bonds and native oxides, robustness to short channel effects, dielectric mediated mobilities, and the presence of a band gap are all favorable for use in TFETs. However, doping methods are needed for TMDs to create the p-n junction required for the TFET. Charge transfer doping [2] and ion-doping using solid polymers [3] are two approaches being explored. In this paper we show for the first time, the use of polyethylene oxide (PEO) and the salt, CsClO4, to induce both n and p channel conductivity in exfoliated WSe2 FETs.
Keywords :
field effect transistors; polymer electrolytes; semiconductor doping; tungsten compounds; tunnel transistors; TFET; TMD; WSe2; charge transfer doping; dangling bonds; dielectric-mediated mobilities; ion doping; n-channel conductivity; native oxides; p-channel conductivity; p-n junction; polyethylene-oxide cesium-perchlorate solid polymer electrolyte; salt; short channel effects; transition metal dichalcogenides; tungsten diselenide field-effect transistor; tunnel field-effect transistors; ultrathin body; Annealing; Doping; Field effect transistors; Logic gates; Metals; Polymers; Temperature measurement;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872329