DocumentCode :
1777245
Title :
Memristive synaptic plasticity in Pr0.7Ca0.3MnO3 RRAM by bio-mimetic programming
Author :
Panwar, Nisha ; Kumar, Dinesh ; Upadhyay, N.K. ; Arya, P. ; Ganguly, Utsav ; Rajendran, Bipin
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, Mumbai, India
fYear :
2014
fDate :
22-25 June 2014
Firstpage :
135
Lastpage :
136
Abstract :
In this paper, the authors have demonstrated various forms of timing dependent plasticity in PCMO based RRAM devices using very simple programming pulses leveraging its memristive characteristics. Thanks to the intrinsic rectifying nature of their devices in the ON state, they have also shown that our synapse circuit does not require a current-limiting bipolar diode to prevent parasitic programming. These devices thus can be integrated in cross-bar arrays to build neuromorphic systems capable of performing a wide variety of supervised and unsupervised learning tasks.
Keywords :
biomimetics; calcium compounds; learning (artificial intelligence); manganese compounds; memristors; neural nets; neurophysiology; positronium; random-access storage; ON state; PCMO-based RRAM device; Pr0.7Ca0.3MnO3; bio-mimetic programming; cross-bar arrays; current-limiting bipolar diode; memristive characteristics; memristive synaptic plasticity; neuromorphic systems; parasitic programming; programming pulse; supervised learning task; synapse circuit; timing-dependent plasticity; unsupervised learning task; Immune system; MIMICs; Neurons; Programming; Silicon; Switches; Timing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
Type :
conf
DOI :
10.1109/DRC.2014.6872334
Filename :
6872334
Link To Document :
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