Title :
Observation of impact ionization at sub-0.5V and resultant improvement in ideality in I-NPN selector device by Si epitaxy for RRAM applications
Author :
Das, Biswajit ; Meshram, R. ; Ostwal, V. ; Schulze, J. ; Ganguly, Utsav
Author_Institution :
Indian Inst. of Technol., Bombay, Mumbai, India
Abstract :
The improvement in ideality is demonstrated by impact ionization at sub-0.5V in silicon despite the higher 1eV band-gap. The NIPIN structure produces high internal field due to the built-in potential (~1eV) of the junctions in addition to Va (cf. a simple pn junction in IMOS) which provides electron sufficient (>bandgap) energy for II. In addition, the dopant profile engineering with i-region to increase scattering length is possibly responsible to effective Impact Ionization at low bias enabling record low bias II (Table 1 that is attractive for advanced memory and logic.
Keywords :
elemental semiconductors; ionisation; random-access storage; semiconductor epitaxial layers; silicon; I-NPN selector device; NIPIN structure; RRAM; Si; advanced memory; band-gap; dopant profile engineering; high internal field; impact ionization observation; low bias; scattering length; silicon epitaxy; Doping profiles; Epitaxial growth; Impact ionization; Silicon; Steady-state; Temperature dependence; Temperature measurement;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872336
