DocumentCode
1777251
Title
Operating principle verification and scaling benefits of SGLC eNVM
Author
Sung-Kun Park ; Nam-Yoon Kim ; Eun-Mee Kown ; Sang-Yong Kim ; In-Wook Cho ; Kyung-Dong Yoo
Author_Institution
R&D Div., SK hynix Inc., Cheongju, South Korea
fYear
2014
fDate
22-25 June 2014
Firstpage
141
Lastpage
142
Abstract
The authors demonstrated and verified the operation of a SGLC eNVM cell using 3D and 2D TCAD simulations. In addition, we have explained the benefits of the SGLC NVM cell as CMOS process design rules shrink. The novel SGLC cell shows a smaller size than 6T SRAM for beyond the 65 nm technology node. The SGLC cell shows ideal characteristics for eNVM, such as a fast program speed, multi-time programmable support, over-erase free features as well as an SRAM comparable cell size without any additional process steps.
Keywords
CMOS digital integrated circuits; SRAM chips; technology CAD (electronics); 2D TCAD simulations; 3D TCAD simulations; CMOS process design rules; SGLC eNVM; SRAM; embedded NVM; multitime programmable support; operating principle verification; over-erase free features; scaling benefits; select gate lateral coupling; Couplings; Logic gates; Nonvolatile memory; Programming; Random access memory; Solid modeling; Three-dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location
Santa Barbara, CA
Print_ISBN
978-1-4799-5405-6
Type
conf
DOI
10.1109/DRC.2014.6872337
Filename
6872337
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