Title :
Operating principle verification and scaling benefits of SGLC eNVM
Author :
Sung-Kun Park ; Nam-Yoon Kim ; Eun-Mee Kown ; Sang-Yong Kim ; In-Wook Cho ; Kyung-Dong Yoo
Author_Institution :
R&D Div., SK hynix Inc., Cheongju, South Korea
Abstract :
The authors demonstrated and verified the operation of a SGLC eNVM cell using 3D and 2D TCAD simulations. In addition, we have explained the benefits of the SGLC NVM cell as CMOS process design rules shrink. The novel SGLC cell shows a smaller size than 6T SRAM for beyond the 65 nm technology node. The SGLC cell shows ideal characteristics for eNVM, such as a fast program speed, multi-time programmable support, over-erase free features as well as an SRAM comparable cell size without any additional process steps.
Keywords :
CMOS digital integrated circuits; SRAM chips; technology CAD (electronics); 2D TCAD simulations; 3D TCAD simulations; CMOS process design rules; SGLC eNVM; SRAM; embedded NVM; multitime programmable support; operating principle verification; over-erase free features; scaling benefits; select gate lateral coupling; Couplings; Logic gates; Nonvolatile memory; Programming; Random access memory; Solid modeling; Three-dimensional displays;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872337