• DocumentCode
    1777251
  • Title

    Operating principle verification and scaling benefits of SGLC eNVM

  • Author

    Sung-Kun Park ; Nam-Yoon Kim ; Eun-Mee Kown ; Sang-Yong Kim ; In-Wook Cho ; Kyung-Dong Yoo

  • Author_Institution
    R&D Div., SK hynix Inc., Cheongju, South Korea
  • fYear
    2014
  • fDate
    22-25 June 2014
  • Firstpage
    141
  • Lastpage
    142
  • Abstract
    The authors demonstrated and verified the operation of a SGLC eNVM cell using 3D and 2D TCAD simulations. In addition, we have explained the benefits of the SGLC NVM cell as CMOS process design rules shrink. The novel SGLC cell shows a smaller size than 6T SRAM for beyond the 65 nm technology node. The SGLC cell shows ideal characteristics for eNVM, such as a fast program speed, multi-time programmable support, over-erase free features as well as an SRAM comparable cell size without any additional process steps.
  • Keywords
    CMOS digital integrated circuits; SRAM chips; technology CAD (electronics); 2D TCAD simulations; 3D TCAD simulations; CMOS process design rules; SGLC eNVM; SRAM; embedded NVM; multitime programmable support; operating principle verification; over-erase free features; scaling benefits; select gate lateral coupling; Couplings; Logic gates; Nonvolatile memory; Programming; Random access memory; Solid modeling; Three-dimensional displays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2014 72nd Annual
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    978-1-4799-5405-6
  • Type

    conf

  • DOI
    10.1109/DRC.2014.6872337
  • Filename
    6872337