Title :
Scaling analysis of in-plane and perpendicular anisotropy magnetic tunnel junctions using a physics-based model
Author :
Jongyeon Kim ; Hui Zhao ; Yanfeng Jiang ; Klemm, Alexander ; Jian-Ping Wang ; Kim, Chul Han
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Minnesota, Minneapolis, MN, USA
Abstract :
This paper presents a comprehensive study on the scalability of STT-MRAM based on various MTJ technologies: namely, in-plane MTJ (IMTJ), crystal perpendicular MTJ (c-PMTJ), and interface perpendicular MTJ (i-PMTJ). For a practical analysis, our simulation model captures key physics of STT switching in various MTJs by incorporating dimension-dependent effective anisotropy field (HKeff) into the Landau-Lifshitz-Gilbert (LLG) equation and considering realistic material parameters.
Keywords :
MRAM devices; integrated circuit modelling; magnetic tunnelling; magnetoelectronics; perpendicular magnetic anisotropy; IMTJ; LLG equation; Landau-Lifshitz-Gilbert equation; STT switching simulation model; STT-MRAM scalability; c-PMTJ; crystal perpendicular MTJ; dimension-dependent effective anisotropy field; i-PMTJ; in-plane MTJ; in-plane scaling analysis; interface perpendicular MTJ; perpendicular anisotropy magnetic tunnel junctions; physics-based model; spin transfer torque magnetoresistive random access memory; Analytical models; Anisotropic magnetoresistance; Integrated circuits; Layout; Magnetic tunneling; Materials; Switches;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872344
