Title :
The origin of massive nonlinearity in Mixed-Ionic-Electronic-Conduction (MIEC)-based Access Devices, as revealed by numerical device simulation
Author :
Padilla, Alexandra ; Burr, Geoffrey W. ; Shenoy, Rohit S. ; Raman, Karthik V. ; Bethune, D. ; Shelby, Robert M. ; Rettner, Charles T. ; Mohammad, Jihad ; Virwani, Kumar ; Narayanan, Pritish ; Deb, Alok Kanti ; Pandey, Rajan K. ; Bajaj, Mohit ; Murali, Kot
Author_Institution :
IBM Res. - Almaden, San Jose, CA, USA
Abstract :
Numerical modeling is used to explain the origin of the large ON/OFF ratios, ultra-low leakage, and high ON current densities exhibited by BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials [1-5]. Motion of large populations of copper ions and vacancies leads to exponential increases in hole current, with a turn-ON voltage that depends on material bandgap. Device simulations match experimental observations as a function of temperature, electrode aspect-ratio, thickness, and device CD.
Keywords :
copper; current density; numerical analysis; random-access storage; BEOL-friendly access devices; Cu; MIEC materials; MIEC-based access devices; ON-OFF ratios; copper ions; device CD; device simulations; electrode aspect-ratio; high ON current density; hole current; massive nonlinearity; material bandgap; mixed-ionic-electronic-conduction; numerical device simulation; resistive nonvolatile memory; temperature function; turn-ON voltage; ultra-low leakage; vacancies; Adaptation models; Charge carrier processes; Electrodes; Ions; Materials; Mobile communication; Voltage measurement; Access device; MIEC; MRAM; NVM; PCM; RRAM;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872348
