The voltage-triggered SET mechanism and self-compliance characteristics in intrinsic unipolar SiOx-based resistive switching memory

Author

Yao-Feng Chang ; Fowler, B. ; Ying-Chen Chen ; Li Ji ; Fei Zhou ; Lee, Jong Chul

Author_Institution

MRC, Univ. of Texas at Austin, Austin, TX, USA

fYear

2014

fDate

22-25 June 2014

Firstpage

165

Lastpage

166

Abstract

In conclusion, the voltage-triggered SET mechanism and self-compliance characteristics have been studied in SiOx-based RRAM. A controllable program window is demonstrated, and further understanding is obtained using a dynamic conductivity method to provide insights into filament and GAP characteristics. These parameters not only help identify RS mechanisms, but also aid construction of a model to predict device operating performance for future device designs and applications.

Keywords

integrated circuit design; random-access storage; silicon compounds; GAP characteristic; RS mechanism; SiO_x; controllable program window; device design; device operating performance; dynamic conductivity method; filament characteristic; intrinsic unipolar silicon oxide-based resistive switching memory; self-compliance characteristics; voltage-triggered SET mechanism; Conductivity; Educational institutions; Reliability; Resistance; Stress; Switches; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2014 72nd Annual

Conference_Location

Santa Barbara, CA

Print_ISBN

978-1-4799-5405-6

Type

conf

DOI

10.1109/DRC.2014.6872349

Filename

6872349