Title :
The voltage-triggered SET mechanism and self-compliance characteristics in intrinsic unipolar SiOx-based resistive switching memory
Author :
Yao-Feng Chang ; Fowler, B. ; Ying-Chen Chen ; Li Ji ; Fei Zhou ; Lee, Jong Chul
Author_Institution :
MRC, Univ. of Texas at Austin, Austin, TX, USA
Abstract :
In conclusion, the voltage-triggered SET mechanism and self-compliance characteristics have been studied in SiOx-based RRAM. A controllable program window is demonstrated, and further understanding is obtained using a dynamic conductivity method to provide insights into filament and GAP characteristics. These parameters not only help identify RS mechanisms, but also aid construction of a model to predict device operating performance for future device designs and applications.
Keywords :
integrated circuit design; random-access storage; silicon compounds; GAP characteristic; RS mechanism; SiOx; controllable program window; device design; device operating performance; dynamic conductivity method; filament characteristic; intrinsic unipolar silicon oxide-based resistive switching memory; self-compliance characteristics; voltage-triggered SET mechanism; Conductivity; Educational institutions; Reliability; Resistance; Stress; Switches; Voltage control;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872349
