Title :
Vertical heterojunction of MoS2 and WSe2
Author :
Shudong Xiao ; Mingda Li ; Seabaugh, Alan ; Jena, D. ; Xing, Huili Grace
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
The development of experimental methods1 to create stacked structures of layered 2D materials with atomic-plane precision provides opportunities to study a variety of van der Waals heterojunctions that is difficult to fabricate with traditional growth methods. Here, we report the vertical integration of two 2D TMD materials, MoS2 and WSe2, to form van der Waals heterojunction. We show that the electrical properties of the heterojunction are controlled by gate voltage and rectification is observed with forward/reverse current ratio ~ 100.
Keywords :
Schottky barriers; gold; molybdenum compounds; palladium; rectification; semiconductor heterojunctions; semiconductor materials; semiconductor-metal boundaries; titanium; tungsten compounds; Au-MoS2; Pd-WSe2; Schottky-like metal; Ti-MoS2; atomic plane precision; electrical properties; forward-reverse current ratio; gate voltage; layered 2D materials; metal-semiconductor contacts; n-type molybdenum disulfide semiconductor; p-type tungsten selenide semiconductor; rectification; stacked structures; van der Waals heterojunction; vertical heterojunction;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872351
