Title :
Design and analysis of MoS2-based MOSFETs for ultra-low-leakage dynamic memory applications
Author :
Kshirsagar, Chaitanya ; Xu, Wei ; Kim, Chul Han ; Koester, Steven J.
Author_Institution :
Univ. of Minnesota - Twin Cities, Minneapolis, MN, USA
Abstract :
In this work, we describe the design space required to realize two-dimensional (2D) MoS2 low-leakage MOSFETs. We combine TCAD electrostatic simulations with an analytical transport model to predict the subthreshold performance of MoS2 MOSFETs. We further apply this model to a dynamic memory cell design and benchmark the performance advantages compared to conventional low-leakage silicon technology.
Keywords :
MOSFET; integrated circuit design; molybdenum compounds; semiconductor device models; storage management chips; technology CAD (electronics); 2D molybdenum disulfide low-leakage MOSFET; MoS2; TCAD electrostatic simulation; analytical transport model; design space; dynamic memory cell design; low-leakage silicon technology; molybdenum disulfide MOSFET analysis; molybdenum disulfide MOSFET design; subthreshold performance prediction; two-dimensional molybdenum disulfide low-leakage MOSFET; ultralow-leakage dynamic memory application; Analytical models; Logic gates; MOSFET; Performance evaluation; Semiconductor device modeling; Silicon;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872360
