Title :
Defining and overcoming the contact resistance challenge in scaled carbon nanotube transistors
Author :
Franklin, Aaron D. ; Haensch, Wilfried
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
In this work, we define the relevant aspects of a CNTFET contact and the corresponding resistances, putting them into the proper context for a sub-10 nm technology node. Also, new results on the use of different metal-CNT contacts and how they impact the Rc vs. Lc scaling is presented.
Keywords :
carbon nanotube field effect transistors; contact resistance; CNTFET contact; contact resistance; metal-CNT contacts; scaled carbon nanotube transistors; CNTFETs; Contact resistance; Logic gates; Market research; Metals; Resistance;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872362
